SZM-3166Z Datasheet (RF Micro Devices)

SZM-3166Z, 2W POWER AMPLIFIER

RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.

This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low

SZM-3166Z Features

* an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix. Optimum