RT550PD Datasheet - RFHIC

RT550PD - Power Transistor

The RT550PD is designed for base stations and cell extenders as 300MHz ~ 3GHz. Absolute Maximum Ratings Parameter Drain - Source Voltage Gate - Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol Vds Vgs Pt Tstg Tch Rating +12 -5V~0V 37 -65 ~ +200 175 Unit V V W.

RT550PD Features

* High Output Power P1dB = 40dBm(typ)@2.3GHz

* High Efficiency

* High Power Gain G1dB = 10dB(typ) @2.3GHz

* High Linearity

* Hermetically sealed package

* Competitive Price RT550PD Application

* Repeater

* RF Sub-Systems

* Base

RT550PD_RFHIC.pdf