SBB1089Z Datasheet | RF Micro Devices

Description RFMD’s SBB1089Z is a high performance In Ga P HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB1089Z does not require a dropping resistor as pared to typical Darlington amplifiers. The SBB1089Z product is designed for high linearity 5V gain block applications that require small size and minimal external ponents. It is internally matched to 50. Optimum Technology Matching® Applied Ga As HBT Ga As MESFET - In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS d B Gain and Return Loss versus Frequency (w/ App. Ckt.) 25 S21 S11 S21 S22 -5 S11 -15 -25 -35 50 S22 150 250 350 450 550 650 750 850 Frequency (MHz) Features - OIP3=43.1d Bm at 240MHz - P1d B=19.6d Bm at 500MHz - Single Fixed 5V Supply - Robust 1000V ESD, Class 1C - Patented Thermal Design and Bias Circuit - Low Thermal Resistance Applications - Receiver IF Amplifier - Cellular, PCS, GSM, UMTS - Wireless Data, Satellite Terminals Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 15.5 d B...