BD15GA5WEFJ Datasheet, Regulators, ROHM

BD15GA5WEFJ Features

• Regulators
• +/-1% output voltage accuracy
• Built-in Over Current Protection circuit (OCP)
• Built-in Thermal Shut Down circuit (TSD)
• Zero µA shutdown mode

PDF File Details

Part number:

BD15GA5WEFJ

Manufacturer:

ROHM ↗

File Size:

539.65kb

Download:

📄 Datasheet

Description:

Ldo regulators. BDxxGA5WEFJ series devices are LDO regulators with an output current of 0.5A. The output accuracy is ±1% of the output voltage. Both

BD15GA5WEFJ Application

• Applications It has a small package type: HTSOP-J8 (4.90mm x 6.00mm x 1.00mm). These devices have built in over current protection to protect the d

TAGS

BD15GA5WEFJ

ROHM

📁 Related Datasheet

BD15GA3WEFJ - LDO Regulators (ROHM)
Datasheet 300mA Variable / Fixed Output LDO Regulators BDxxGA3WEFJ / BDxxGA3WNUX ●General Description BDxxGA3WEFJ / BDxxGA3WNUX series devices are LD.

BD15GA3WNUX - LDO Regulators (ROHM)
Datasheet 300mA Variable / Fixed Output LDO Regulators BDxxGA3WEFJ / BDxxGA3WNUX ●General Description BDxxGA3WEFJ / BDxxGA3WNUX series devices are LD.

BD157 - Plastic Medium Power NPN Silicon Transistor (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD157/D Plastic Medium Power NPN Silicon Transistor . . . designed for power output st.

BD157 - NPN Epitxial Silicon Transistor (Fairchild Semiconductor)
BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers 1 TO-126 2.Collector 3.Base 1. Emitter .

BD157 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD157 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·DC Current Gain- : hFE = 30~240(M.

BD158 - NPN Epitxial Silicon Transistor (Fairchild Semiconductor)
BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers 1 TO-126 2.Collector 3.Base 1. Emitter .

BD158 - Plastic Medium Power NPN Silicon Transistor (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD157/D Plastic Medium Power NPN Silicon Transistor . . . designed for power output st.

BD158 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD158 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·DC Current Gain- : hFE = 30~240(M.

BD159 - POWER TRANSISTOR NPN SILICON (ON Semiconductor)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD159/D Plastic Medium Power NPN Silicon Transistor . . . designed for power output st.

BD159 - NPN Epitxial Silicon Transistor (Fairchild Semiconductor)
BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers 1 TO-126 2.Collector 3.Base 1. Emitter .