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MG7213WZ 1200V 75A Insulated Gate Bipolar Transistor

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Description

MG7213WZ 1200V 75A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max.Possible Chips per Wafer 1200V 75A 1.7V 152pcs *Fea.

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Datasheet Specifications

Part number
MG7213WZ
Manufacturer
ROHM ↗
File Size
1.52 MB
Datasheet
MG7213WZ-ROHM.pdf
Description
1200V 75A Insulated Gate Bipolar Transistor

Features

* 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) Short Circuit Withstand Time 10μs
* Outline Wafer
* Inner Circuit (2) (1) (3)

Applications

* requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i. e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical

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