R6007MND3
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R6007MNJ - Power MOSFET
(ROHM)
R6007MNJ
Nch 600V 7A Power MOSFET
Datasheet
NotNeRewcDoemsimgennsded for
VDSS
600V
lOutline
TO-263S
RDS(on)(Max.)
0.730Ω
SC-83
ID
±7.
R6007MNJ - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6007MNJ
FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Res.
R6007ENJ - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6007ENJ
FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Res.
R6007ENJ - Power MOSFET
(ROHM)
R6007ENJ
Nch 600V 7A Power MOSFET
Datasheet
lOutline
VDSS
600V
TO-263S
RDS(on)(Max.)
0.62Ω
SC-83
ID
±7A
LPT(S)
PD
lFeatures
78W
.
R6007ENX - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6007ENX
FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Res.
R6007ENX - Power MOSFET
(ROHM)
R6007ENX
Nch 600V 7A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on)(Max.)
0.62Ω
ID
±7A
TO-220FM
PD
46W
lInner circui.
R6007JND3 - Power MOSFET
(ROHM)
R6007JND3
Nch 600V 7A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.780Ω
±7A 96W
lFeatures
1) Fast reverse recovery time (trr) 2) Low on-resistanc.
R6007JND3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6007JND3
FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Res.
R6007JNJ - Power MOSFET
(ROHM)
R6007JNJ
Nch 600V 7A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.780Ω
±7A 96W
lFeatures
1) Fast reverse recovery time (trr) 2) Low on-resistance.
R6007JNJ - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6007JNJ
FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resi.