R6011ENJ Datasheet - ROHM

R6011ENJ Power MOSFET

R6011ENJ Features

* 124W 　　　　　　　 lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to 　　be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Embossed Tape Reel size (mm)

R6011ENJ Datasheet (1.56 MB)