R6030ENZ1 Datasheet, Mosfet, ROHM

R6030ENZ1 Features

• Mosfet 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. e 4) Drive circuits can be simple. 5) Parallel use is easy. (1)

PDF File Details

Part number:

R6030ENZ1

Manufacturer:

ROHM ↗

File Size:

1.24MB

Download:

📄 Datasheet

Description:

Power mosfet.

TAGS

R6030ENZ1

ROHM

📁 Related Datasheet

R6030ENZ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6030ENZ FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re.

R6030ENZ - Power MOSFET (ROHM)
R6030ENZ 　　Nch 600V 30A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.130Ω ID ±30A TO-3PF PD 120W 　 　　　　　　 lInner circ.

R6030ENZ1 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-.

R6030ENX - Power MOSFET (ROHM)
R6030ENX 　　Nch 600V 30A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.130Ω ±30A 86W lFeatures 1) Low on-resistance 2) Fast switching 3.

R6030ENX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6030ENX FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re.

R6030422 - Fast Recovery Rectifier (Powerex Power Semiconductors)
.

R6030425 - Fast Recovery Rectifier (Powerex Power Semiconductors)
.

R6030435 - Fast Recovery Rectifier (Powerex Power Semiconductors)
.

R6030622 - Fast Recovery Rectifier (Powerex Power Semiconductors)
.

R6030625 - Fast Recovery Rectifier (Powerex Power Semiconductors)
.