RBR10T60ANZ - Schottky Barrier Diode
RBR10T60ANZ Features
* 1) Cathode common dual type 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type ① 1.2 1.3 0.8 (1) (2) (3) 2.45±0.5 2.45±0.5 ROHM : TO220FN 5.0±0.2 8.0±0.2 14.0±0.5 12.0±0.2 15.0± 0.4 0.2 2.6±0.5 0.75±00..015 1 Manufacture date Data Sheet lStructure (1) (2) (3) Anode Cat
