* 1) Cathode common dual type 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type ① 1.2 1.3 0.8 (1) (2) (3) 2.45±0.5 2.45±0.5 ROHM : TO220FN 5.0±0.2 8.0±0.2 14.0±0.5 12.0±0.2 15.0± 0.4 0.2 2.6±0.5 0.75±00..015 1 Manufacture date Data Sheet lStructure (1) (2) (3) Anode Cat
RBR10T60ANZ Datasheet (525.87 KB)
RBR10T60ANZ
525.87 KB
Schottky barrier diode.
Schottky Barrier Diode
RBR10T60ANZ
lApplication Switching power supply
lDimensions (Unit : mm)
10.0±00..31
φ3.2±0.2
4.5±00..31 2.8±00..21
lFeatu.
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