SCS220AE - SiC Schottky Barrier Diode

ROHM

Datasheet Details

1) Shorter recovery time 650V 20A 31nC TO-247 (1) (2) (3) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) N/C (2) Cathode (3) Anode (1) (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 2.

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Published: May 8, 2014 |