SCTMU001F Datasheet - ROHM

SCTMU001F, N-channel SiC power MOSFET

SCTMU001F N-channel SiC power MOSFET *Outline Datasheet VDSS RDS(on) (Typ.) ID PD *.

Features

* 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 400V 120m 20A 132W TO220AB
* Inner circuit (2)
* 1 (1) (1) Gate (2) Drain (3) Source
* 1 Body Diode (3) 6) Pb-free lead plating ; RoHS compliant
* Packaging specification

Applications

* indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requir ing a high deg ree of reliability (as e xemplified below), please contact and consult with a R OHM representative : tr ansportation equi

SCTMU001F-ROHM.pdf