630 - 9A 200V N-channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number	630
Manufacturer	ROUM
File Size	1.33 MB
Description	9A 200V N-channel Enhancement Mode Power MOSFET
Datasheet	630-ROUM.pdf

630 Product details

Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

Fast Switching.
Low ON Resistance(Rdson≤0.4Ω).
Low Gate Charge(Typical Data:22nC).
Low Reverse Transfer Capacitances(Typical:22pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

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Published: Jan 17, 2019 |