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B2N60

2A 600V N-channel Enhancement Mode Power MOSFET

B2N60 Features

* Fast Switching

* Low ON Resistance(Rdson≤4.5Ω)

* Low Gate Charge(Typ:8nC)

* Low Reverse Transfer Capacitances(Typ:3.8pF)

* 100% Single Pulse Avalanche Energy Test

* 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications

* used in various power switching circuit for sys

B2N60 Datasheet (1.42 MB)

Preview of B2N60 PDF

Datasheet Details

Part number:

B2N60

Manufacturer:

ROUM

File Size:

1.42 MB

Description:

2a 600v n-channel enhancement mode power mosfet.

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B2N60 600V N-channel Enhancement Mode Power MOSFET ROUM

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