B4N60 4A 600V N-channel Enhancement Mode Power MOSFET

Description

4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance.

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Datasheet Specifications

Part number: B4N60
Manufacturer: ROUM
File Size: 1.27 MB
Datasheet: B4N60-ROUM.pdf
Description: 4A 600V N-channel Enhancement Mode Power MOSFET

Features

* Fast Switching
* ESD Improved Capability
* Low ON Resistance(Rdson≤2.5Ω)
* Low Gate Charge(Typical Data:14.5nC)
* Low Reverse Transfer Capacitances(Typical:4pF)
* 100% Single Pulse Avalanche Energy Test

Applications

* used in various power switching circuit for system miniaturization and higher efficiency.
* Power switch circuit of electron ballast and adaptor. TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 4N60

B4N60 Distributors

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B4N60 600V N-channel Enhancement Mode Power MOSFET ROUM

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