B8NE60 Datasheet, Mosfet, ROUM

B8NE60 Features

• Mosfet
• Fast Switching
• ESD Improved Capability
• Low ON Resistance(Rdson≤1.3Ω)
• Low Gate Charge(Typical Data:24nC)
• Low Reverse Transfer Capacitanc

PDF File Details

Part number:

B8NE60

Manufacturer:

ROUM

File Size:

1.34MB

Download:

📄 Datasheet

Description:

7.5a 600v n-channel enhancement mode power mosfet. These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switc

B8NE60 Application

• Applications
• Used in various power switching circuit for system miniaturization and higher efficiency.
• Power switch circuit of a

TAGS

B8NE60

ROUM

📁 Related Datasheet

B8N25 - 8A 250V N-channel Enhancement Mode Power MOSFET (ROUM)
8N25/F8N25/I8N25/ E8N25/B8N25/D8N25 8A 250V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by .

B8NM60 - N-Channel MOSFET (STMicroelectronics)
STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type STD5NM60 STD5N.

B80-C1000 - SILICON BRIDGE RECTIFIERS (EIC discrete Semiconductors)
B40-B380/C1000 PRV : 100 - 900 Volts Io : 1.0 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliabil.

B80-C1500R - SILICON BRIDGE RECTIFIERS (EIC discrete Semiconductors)
.eicsemi. TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 B40 - B380/C1500R SILICON BRIDGE RECTIFIERS PRV : 100 - 900 Volts Io : 1.5 Ampere.

B800 - 2SB800 (Renesas)
.

B804 - 2SB804 (Renesas)
.

B805 - 2SB805 (Renesas)
.

B8050 - SAW Components (EPCOS)
SAW Components SAW Duplexer W-CDMA Band 5 (Cellular) Series/type: Ordering code: Date: Version: B8050 B39881B8050F210 April 28, 2008 2.0 © EPCOS AG 2.

B806 - 2SB806 (Renesas)
.

B80C1000 - 1 Amp. Glass Passivated Bridge Rectifier (FAGOR)
B40C1000 B380C1000 1 Amp. Glass Passivated Bridge Rectifier Dimensions in mm. Sufflix A B L ± 0.5 4 3 Voltage 100 to 900 V. Current 1..