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D50N06 50A 60V N-channel Enhancement Mode Power MOSFET

D50N06 Description

50A 60V N-channel Enhancement Mode Power MOSFET D50N06 1 .
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

D50N06 Features

* Fast Switching
* Low ON Resistance(Rdson≤18mΩ)
* Low Gate Charge(Typical:17nC)
* Low Reverse Transfer Capacitances(Typical:150pF)
* 100% Single Pulse Avalanche Energy Test

D50N06 Applications

* Power switching applications
* DC-DC Convertors
* UPS power supply
* Load switch 2 D VDSS = 60V RDS(on) （TYP)= 12mΩ ID = 50A 3S TO-252 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) PARAMETER SYMBOL Maximum Drian-Source DC Voltage Maxim

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Datasheet Details

Part number
D50N06
Manufacturer
ROUM
File Size
743.55 KB
Datasheet
D50N06-ROUM.pdf
Description
50A 60V N-channel Enhancement Mode Power MOSFET

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50A 60V N-channel Enhancement Mode Power MOSFET ROUM
ROUM D50N06-like datasheet