Description
DH100P30/DH100P30F/DH100P30I/ DH100P30E/DH100P30B/DH100P30D 30A 100V P-channel Enhancement Mode Power MOSFET 1 .
These P-channel Enhanced VDMOSFETs, Used advanced trench technology and design, provide to excellent RDSON with low gate charge.
Features
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse Transfer Capacitances
* 100% Single Pulse Avalanche Energy Test
Applications
* Suitable for Motor Drivers.
* Switching Regulators
* Converters and Relay Drivers
* Alertor
VDSS = -100V RDS(on) (TYP)=35mΩ
ID = -30A
TO-220C
TO-220F TO-262
TO-263
TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parame