E25N10 Datasheet - ROUM

E25N10, 25A 100V N-channel Enhancement Mode Power MOSFET

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

Features

* Fast Switching
* Low ON Resistance(Rdson≤36mΩ)
* Low Gate Charge(Typical:61nC)
* Low Reverse Transfer Capacitances(Typical:84pF)
* 100% Single Pulse Avalanche Energy Test

Applications

* Power switching applications
* LED Boost
* UPS power supply
* Load switch VDSS = 100V RDS(on) （TYP)= 30mΩ ID = 25A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 25N1

E25N10-ROUM.pdf