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E25N10 25A 100V N-channel Enhancement Mode Power MOSFET

E25N10 Description

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

E25N10 Features

* Fast Switching
* Low ON Resistance(Rdson≤36mΩ)
* Low Gate Charge(Typical:61nC)
* Low Reverse Transfer Capacitances(Typical:84pF)
* 100% Single Pulse Avalanche Energy Test

E25N10 Applications

* Power switching applications
* LED Boost
* UPS power supply
* Load switch VDSS = 100V RDS(on) （TYP)= 30mΩ ID = 25A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 25N1

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Datasheet Details

Part number
E25N10
Manufacturer
ROUM
File Size
1.21 MB
Datasheet
E25N10-ROUM.pdf
Description
25A 100V N-channel Enhancement Mode Power MOSFET

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25A 100V N-channel Enhancement Mode Power MOSFET ROUM
ROUM E25N10-like datasheet