E4N60 Datasheet - ROUM

E4N60, 4A 600V N-channel Enhancement Mode Power MOSFET

4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance.

Features

* Fast Switching
* ESD Improved Capability
* Low ON Resistance(Rdson≤2.5Ω)
* Low Gate Charge(Typical Data:14.5nC)
* Low Reverse Transfer Capacitances(Typical:4pF)
* 100% Single Pulse Avalanche Energy Test

Applications

* used in various power switching circuit for system miniaturization and higher efficiency.
* Power switch circuit of electron ballast and adaptor. TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 4N60

E4N60-ROUM.pdf

E4N60 Datasheet Preview — Preview of E4N60 PDF

Datasheet Details

Part number:

E4N60

Manufacturer:

ROUM

File Size:

1.27 MB

Description:

4A 600V N-channel Enhancement Mode Power MOSFET

E4N60 Distributors

📁 Related Datasheet

📌 All Tags

E4N60 600V N-channel Enhancement Mode Power MOSFET ROUM

ROUM E4N60-like datasheet