E630 9A 200V N-channel Enhancement Mode Power MOSFET

Description

630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance.

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Datasheet Specifications

Part number: E630
Manufacturer: ROUM
File Size: 1.32 MB
Datasheet: E630-ROUM.pdf
Description: 9A 200V N-channel Enhancement Mode Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤0.4Ω)
* Low Gate Charge(Typical Data:22nC)
* Low Reverse Transfer Capacitances(Typical:22pF)
* 100% Single Pulse Avalanche Energy Test

Applications

* High efficiency switch mode power supplies.
* Electronic lamp ballasts based on half bridge.
* UPS
* Inverter TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 630/I630/

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E630 200V N-channel Enhancement Mode Power MOSFET ROUM

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