F5N60 5A 600V N-channel Enhancement Mode Power MOSFET

Description

5N60/F5N60/I5N60/E5N60/B5N60/D5N60 5A 600V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance.

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Datasheet Specifications

Part number: F5N60
Manufacturer: ROUM
File Size: 1.41 MB
Datasheet: F5N60-ROUM.pdf
Description: 5A 600V N-channel Enhancement Mode Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤1.7Ω)
* Low Gate Charge(Typical:19.5nC)
* Low Reverse Transfer Capacitances(Typical:7.5pF)
* 100% Single Pulse Avalanche Energy Test

Applications

* used in various power switching circuit for system miniaturization and higher efficiency.
* Power switch circuit of electron ballast and adaptor. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parame

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F5N60 600V N-channel Enhancement Mode Power MOSFET ROUM

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