F7N65 7A 650V N-channel Enhancement Mode Power MOSFET

Description

7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance.

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Datasheet Specifications

Part number: F7N65
Manufacturer: ROUM
File Size: 1.28 MB
Datasheet: F7N65-ROUM.pdf
Description: 7A 650V N-channel Enhancement Mode Power MOSFET

Features

* Fast Switching
* ESD Improved Capability
* Low ON Resistance(Rdson≤1.4Ω)
* Low Gate Charge(Typical Data:24nC)
* Low Reverse Transfer Capacitances(Typical:5.5pF)
* 100% Single Pulse Avalanche Energy Test

Applications

* used in various power switching circuit for system miniaturization and higher efficiency.
* Power switch circuit of electron ballast and adaptor. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Value

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F7N65 650V N-channel Enhancement Mode Power MOSFET ROUM

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