I5N60 - 5A 600V N-channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number	I5N60
Manufacturer	ROUM
File Size	1.41 MB
Description	5A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	I5N60-ROUM.pdf

I5N60 Product details

Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

Fast Switching.
Low ON Resistance(Rdson≤1.7Ω).
Low Gate Charge(Typical:19.5nC).
Low Reverse Transfer Capacitances(Typical:7.5pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

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Published: Jan 16, 2019 |