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3N900

N-Channel ENHANCEMENT MODE MOSFET

3N900 Features

* Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% Avalanche Tested ROHS compliant Halogen-free Application High efficiency swith mode power supplies Electronic lamp ballasts Uninterruptible Power Supply UPS VDS@Tjmax 900 V RDS(ON) TYP 2.8 Ω ID 3.0

3N900 General Description

RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligned planar process and improved terminal technology,reducing the conduction loss,enhancing the avalanche energy. Features Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% Avalanche T.

3N900 Datasheet (597.52 KB)

Preview of 3N900 PDF

Datasheet Details

Part number:

3N900

Manufacturer:

Rectron

File Size:

597.52 KB

Description:

N-channel enhancement mode mosfet.

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3N900 N-Channel ENHANCEMENT MODE MOSFET Rectron

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