BCR08AM-14A
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BCR08AM-14 - Triac
(Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉
BCR08AM-14
LOW POWER USE PLANAR PASSIVATION TYPE
BCR08AM-14
OUTLINE DRAWING
φ 5.0 MAX.
Dimensions in mm
4.4
.
BCR08AM-12 - Triac
(Renesas Technology)
BCR08AM-12
Triac
Low Power Use
REJ03G0343-0100 Rev.1.00 Aug.20.2004
Features
• IT (RMS) : 0.8 A • VDRM : 600 V .. • IRGTI, IRGTⅢ : 5.
BCR08AM-12A - Triac
(Renesas)
BCR08AM-12A
600V - 0.8A - Triac
Low Power Use
Features
• IT (RMS): 0.8 A • VDRM: 600 V • IRGTI, IRGT III: 5 mA • Tj: 125 °C
Data Sheet
R07DS1421EJ040.
BCR08AM - Triac
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MITMSIUTBSIUSBHIISSHEI MSEICMOICNODUNCDTUOCRTO
BCR08AS - TRIAC
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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
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4.4±0..
BCR08AS-12 - TRIAC
(Renesas Technology)
..
BCR08AS-12
Triac
Low Power Use
REJ03G0292-0200 Rev.2.00 Mar 22, 2007
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• • • • IT (RMS) : 0.8 A VDRM : 600 V IFGTI, IRGTI.
BCR08AS-8 - TRIAC
(Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
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BCR08PN - NPN/PNP Silicon Digital Tansistor
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BCR08PN - NPN/PNP Silicon Digital Transistor Array
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driver circuit
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BCR-122JL - SMT Broadband Conical Inductors
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Document 334R-1
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• Full-length cap fully protects the coil and provides a large surface for pick and place.
• The sel.