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HAT1069C Silicon P-Channel Power MOSFET

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Description

HAT1069C Silicon P Channel Power MOS FET Power Switching REJ03G0164-0300 Rev.3.00 Oct 19, 2007 .

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Features

* Low on-resistance RDS(on) = 38 mΩ typ (at VGS =
* 4.5 V) www. DataSheet4U. com
* High speed switching
* Capable of 1.8 V gate drive
* High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Index band 6 5 2 3 4 5 D D D D 4 6 G

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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