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HAT2126RP Silicon N-Channel MOSFET

HAT2126RP Description

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.Th.

HAT2126RP Features

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* Low on-resistance
* Capable of 4.5 V gate drive
* High density mounting
* Built-in Schottky Barrier Diode Outline HSOP-11 10 11 9 8 7 6 5 34 1 2 1 D 7 8 D D 2 G 3 G 4, 5, 6, 9, 10 , 11 2, 3 1, 7, 8 S S S 9 10 11 Source Gate Drain S

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Silicon N-Channel MOSFET Renesas Technology
Renesas Technology HAT2126RP-like datasheet