* www.DataSheet4U.com
* Low on-resistance
* Capable of 4.5 V gate drive
* High density mounting
* Built-in Schottky Barrier Diode Outline HSOP-11 10 11 9 8 7 6 5 34 1 2 1 D 7 8 D D 2 G 3 G 4, 5, 6, 9, 10 , 11 2, 3 1, 7, 8 S S S 9 10 11 Source Gate Drain S
HAT2126RP Datasheet (301.10 KB)
HAT2126RP
Renesas ↗ Technology
301.10 KB
Silicon n-channel mosfet.
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.
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