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HAT2196C - Silicon N-Channel Power MOSFET

HAT2196C Description

HAT2196C Silicon N Channel MOS FET Power Switching REJ03G1235-0500 Rev.5.00 Jun.13, 2005 .

HAT2196C Features

* Low on-resistance RDS(on) = 45 mΩ typ. (at VGS = 4.5 V) www. DataSheet4U. com
* Low drive current.
* High density mounting
* 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D 1. Source 2. D

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Silicon N-Channel Power MOSFET Renesas Technology
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