Datasheet4U Logo Datasheet4U.com

HSM226S - Silicon Schottky Barrier Diode

Datasheet Summary

Features

  • Low reverse current, Low capacitance.
  • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM226S Laser Mark S22 Package Code MPAK Pin Arrangement 3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2 2 1 (Top View) Rev.1.00, Jan.21.2004, page 1 of 4 HSM226S Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current forward current Junction temperature Storage.

📥 Download Datasheet

Datasheet preview – HSM226S

Datasheet Details

Part number HSM226S
Manufacturer Renesas Technology
File Size 89.73 KB
Description Silicon Schottky Barrier Diode
Datasheet download datasheet HSM226S Datasheet
Additional preview pages of the HSM226S datasheet.
Other Datasheets by Renesas Technology

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com HSM226S Silicon Schottky Barrier Diode for High speed switching REJ03G0057-0100Z Rev.1.00 Jan.21.2004 Features • Low reverse current, Low capacitance. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM226S Laser Mark S22 Package Code MPAK Pin Arrangement 3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2 2 1 (Top View) Rev.1.00, Jan.21.2004, page 1 of 4 HSM226S Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current forward current Junction temperature Storage temperature Notes: 1. 10 ms sine wave 1 pulse 2.
Published: |