HVD147 Datasheet, Diode, Renesas Technology

HVD147 Features

• Diode
• Adopting the trench structure improves low capacitance.(C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Super sm

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HVD147

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Renesas ↗ Technology

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107.84kb

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📄 Datasheet

Description:

Silicon epitaxial trench pin diode.

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HVD147

Renesas Technology

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