Renesas Electronics RJK0393DPA
N-Channel Power MOSFET
FEATURES
● High speed switching● Capable of 4.5V gate drive
● Low drive current
● High density mounting
● Low on-resistance
● Pb-free
● Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4 4321 G Preliminary Datasheet R07DS0925EJ0400 Rev.4.00 Mar 22, 2013 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3●ch-C Tch Tstg Ratings 30 20 40 160 40 16 25.6 40 3.13 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS0925EJ0400 Rev.4.00 Mar 22, 2013 Page 1 of 6 RJK0393DPA
ELECTRICAL CHARACTERISTICS
Item Sym...