RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

RJK2009DPM Description

RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G0474-0200 Rev.2.00 Aug.09.2005 .

RJK2009DPM Features

* Low on-resistance
* Low leakage current
* High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings www. DataSheet4U. com (Ta = 25°C) Symbol VDSS VGSS ID ID (pulse)Note1 IDR ID

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Datasheet Details

Part number: RJK2009DPM
Manufacturer: Renesas ↗ Technology
File Size: 122.95 KB
Datasheet: RJK2009DPM_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

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Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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