RJK5012DPE

Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

RJK5012DPE Features

* Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)

* Low leakage current

* High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3

RJK5012DPE General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK5012DPE Datasheet (109.94 KB)