RJK5012DPE - Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

RJK5012DPE Datasheet Preview — Preview of RJK5012DPE PDF

Datasheet Details

Part number	RJK5012DPE
Manufacturer	Renesas ↗ Technology
File Size	109.94 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	RJK5012DPE_RenesasTechnology.pdf

RJK5012DPE Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C).
Low leakage current.
High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010 Outline.

📁 RJK5012DPE Similar Datasheet

RJK5012DPP-A0 - MOSFET (Renesas)
RJK5012DPP-E0 - MOS FET (Renesas)
RJK5014DPP-E0 - MOSFET (Renesas)
RJK5026DPP-E0 - MOS FET (Renesas)
RJK5026DPP-M0 - N-Channel MOSFET (Renesas)
RJK5030DPP-M0 - High Speed Power Switching (Renesas)
RJK5031DPD - N-Channel Power MOSFET (Renesas)
RJK5032DPD - MOS FET (Renesas)

Other Datasheets by Renesas Technology

RJK5012DPP - Silicon N-Channel MOSFET
RJK5013DPE - Silicon N Channel Power MOS FET
RJK5013DPK - Silicon N Channel MOS FET High Speed Power Switching
RJK5013DPP - Silicon N Channel MOS FET High Speed Power Switching
RJK5014DPK - Silicon N Channel MOS FET High Speed Power Switching
RJK5014DPP - Silicon N-Channel MOSFET

Published: Jul 23, 2010 |