RJK5012DPE Datasheet - Renesas Technology

RJK5012DPE Silicon N Channel MOS FET High Speed Power Switching

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RJK5012DPE Features

* Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)

* Low leakage current

* High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3

RJK5012DPE_RenesasTechnology.pdf