RQA0009TXDQS Silicon N-Channel MOS FET

Renesas Technology

Description

www.DataSheet4U.com RQA0009TXDQS Silicon N-Channel MOS FET REJ03G1520-0100 Rev.1.00 Jul 04, 2007 .

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Datasheet Specifications

Part number: RQA0009TXDQS
Manufacturer: Renesas ↗ Technology
File Size: 224.36 KB
Datasheet: RQA0009TXDQS_RenesasTechnology.pdf
Description: Silicon N-Channel MOS FET

Features

* High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)
* Compact package capable of surface mounting
* Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline RENESAS Package code: PLZ

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