RQA0009TXDQS Datasheet, Fet, Renesas Technology

✔ RQA0009TXDQS Features

High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)
Compact package capable of surface mounting

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Part number:

RQA0009TXDQS

Manufacturer:

Renesas ↗ Technology

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224.36kb

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📄 Datasheet

Description:

Silicon n-channel mos fet.

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Stock and price

Renesas Electronics Corporation

MOSFET N-CH 16V 3.2A UPAK

DigiKey

RQA0009TXDQS-H1

0 In Stock

Unit Price : $0

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RQA0009TXDQS Silicon N-Channel MOS FET Renesas Technology