RQA0009TXDQS Datasheet - Renesas Technology

Datasheet Details

Part number:

RQA0009TXDQS

Manufacturer:

File Size:

224.36 KB

Description:

Silicon n-channel mos fet.

RQA0009TXDQS, Silicon N-Channel MOS FET

RQA0009TXDQS Features

* High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)

* Compact package capable of surface mounting

* Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline RENESAS Package code: PLZ

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