2SK2857C - N-CHANNEL MOSFET
2SK2857C Features
* Directly driven by a 4.0 V power source.
* Low on-state resistance RDS(on)1 = 105 m ī MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 mī MAX. (VGS = 4.0 V, ID = 2.0 A) Ordering Information Part Number Lead Plating Packing Package 2SK2857C-T1-AZ/AY -AZ : Sn-Bi , -AY : Pure Sn 1000p/Ree
