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B1628 2SB1628

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Description

DATA SHEET SILICON TRANSISTOR 2SB1628 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 featu.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

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Features

* high current capacity in small dimension and is ideal for DC/DC converters and mortor drivers. FEATURES
* High current capacitance
* Low collector saturation voltage QUALITY GRADES
* Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E)

Applications

* PACKAGE DRAWING (UNIT: mm) Electrode connection 1: Emitter 2: Collector (fin) 3: Base ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Base current (pul

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