BCR16FM-12LB Datasheet, Triac, Renesas

BCR16FM-12LB Features

  • Triac
  • IT (RMS) : 16 A
  • VDRM : 600 V
  • Tj: 150 °C
  • IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 Data Sheet R07DS1188EJ0201 Rev.2.01 Feb. 19, 2019
  • In

PDF File Details

Part number:

BCR16FM-12LB

Manufacturer:

Renesas ↗

File Size:

517.71kb

Download:

📄 Datasheet

Description:

Triac.

Datasheet Preview: BCR16FM-12LB 📥 Download PDF (517.71kb)
Page 2 of BCR16FM-12LB Page 3 of BCR16FM-12LB

BCR16FM-12LB Application

  • Applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Volta

TAGS

BCR16FM-12LB
Triac
Renesas

📁 Related Datasheet

BCR16FM-12LB - Thyristor (INCHANGE)
isc Thyristors INCHANGE Semiconductor BCR16FM-12LB DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High mutation capability ·Minim.

BCR16FM-14LB - Triac (Renesas)
BCR16FM-14LB 700V - 16A - Triac Medium Power Use Features • IT (RMS) : 16 A • VDRM : 800 V (Tj=125C) • Tj: 150 °C • IFGTI, IRGTI, IRGT III:30 mA(20mA.

BCR16FM-14LJ - Thyristor (INCHANGE)
isc Thyristors DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations for robust d.

BCR16FM-14LJ - Triac (Renesas)
BCR16FM-14LJ 700V - 16A - Triac Medium Power Use Features • IT (RMS) : 16 A • VDRM : 800 V (Tj=125C) • Tj: 150°C • IFGTI, IRGTI, IRGT III: 30 mA Dat.

BCR16FM-16LH - Triac (Renesas)
BCR16FM-16LH 800V - 16A - Triac Medium Power Use Features • IT (RMS) : 16 A • VDRM : 800 V • Tj: 150 °C • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT i.

BCR162 - PNP Silicon Digital Transistor (Siemens Semiconductor Group)
BCR 162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drivere circuit • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ).

BCR162 - PNP Silicon Digital Transistor (Infineon Technologies AG)
BCR162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = .

BCR162F - PNP Silicon Digital Transistor (Infineon Technologies AG)
BCR162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = .

BCR162L3 - PNP Silicon Digital Transistor (Infineon Technologies AG)
BCR162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = .

BCR162T - PNP Silicon Digital Transistor (Infineon Technologies AG)
BCR162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = .

Stock and price

Renesas Electronics Corporation
TRIAC 1.5V 600V 16A 2mA 3-Pin TO-220FPA - Trays (Alt: BCR16FM-12LB#BG0)
Avnet Americas
BCR16FM-12LB#BG0
0 In Stock
0
Unit Price : $0
No Longer Stocked
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts