BCR5AM-12LA Datasheet, Triac, Renesas

BCR5AM-12LA Features

• Triac
• IT(RMS) : 5 A
• VDRM : 600 V
• IFGT I, IRGT I, IRGT III : 20 mA (10 mA)Note6 Outline REJ03G0293-0300 Rev.3.00 Nov 30, 2007
• Non-Insulated Type
<

PDF File Details

Part number:

BCR5AM-12LA

Manufacturer:

Renesas ↗

File Size:

214.66kb

Download:

📄 Datasheet

Description:

Triac.

BCR5AM-12LA Application

• Applications Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, ref

TAGS

BCR5AM-12LA

Renesas

📁 Related Datasheet

BCR5AM - TRIAC (Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5AM OUTLINE DRAWING 10.5 MAX Dimensions in.

BCR5AM - TRIAC (Powerex Power Semiconductors)
BCR5AM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Triac 5 Amperes/400-600 Volts OUTLINE DRAWING C  D E.

BCR5AS - TRIAC (Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5AS OUTLINE DRAWING Dimensions in mm 6.5 .

BCR5AS - Triac (Powerex Power Semiconductors)
BCR5AS Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Surface Mount Triac 5 Amperes/400-600 Volts OUTLINE DRAWI.

BCR5AS-12A - Triac (Renesas Technology)
BCR5AS-12A Triac Medium Power Use REJ03G0291-0200 Rev.2.00 Nov 30, 2007 Features • IT (RMS) : 5 A • VDRM : 600 V .. • IFGTI , IRGTI,.

BCR503 - NPN Silicon Digital Transistor (Siemens Semiconductor Group)
BCR 503 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) .

BCR503 - NPN Silicon Digital Transistor (Infineon Technologies AG)
NPN Silicon Digital Transistor • Built in bias resistor (R1= 2.2 kΩ, R2= 2.2 kΩ) • Pb-free (RoHS pliant) package • Qualified according AEC Q101 BC.

BCR505 - NPN Silicon Digital Transistor (Siemens Semiconductor Group)
BCR 505 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=10kΩ) .

BCR505 - NPN Silicon Digital Transistor (Infineon Technologies AG)
NPN Silicon Digital Transistor • Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) • Pb-free (RoHS pliant) package • Qualified according AEC Q101 BCR.

BCR512 - NPN Silicon Digital Transistor (Siemens Semiconductor Group)
BCR 512 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) .