NP40N055ELE - MOS FIELD EFFECT TRANSISTOR

Renesas

Datasheet Details

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Channel temperature 175 degree rated.
Super low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 5.0 V, ID = 20 A) RDS(on)3 = 32 mΩ MAX. (VGS = 4.5 V, ID = 20 A).
Low input capacitance Ciss = 1300 pF TYP.
Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all produ.

📁 NP40N055ELE Similar Datasheet

Other Datasheets by Renesas

Published: Aug 18, 2015 |