NP82N04NDG

N-CHANNEL POWER MOS FET

Renesas

NP82N04NDG Features

* Logic level

* Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A)

* High current rating ID(DC) = ±82 A

* Low input capacitance Ciss = 6000 pF TYP.

* Designed for automotive application

NP82N04NDG General Description

The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N04MDG-S18-AY Note NP82N04NDG-S18-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Note Pb-free (This product does not contain.

NP82N04NDG Datasheet (344.64 KB)