R1Q6A7218ABG, R1Q6A7236ABG - 72-Mbit DDRII SRAM Separate I/O 2-word Burst RAM

Renesas

R1Q6A7218ABG Datasheet Preview — This datasheet PDF includes multiple part numbers: R1Q6A7218ABG, R1Q6A7236ABG. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	R1Q6A7218ABG, R1Q6A7236ABG
Manufacturer	Renesas ↗
File Size	796.15 KB
Description	72-Mbit DDRII SRAM Separate I/O 2-word Burst RAM
Datasheet	R1Q6A7236ABG-Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: R1Q6A7218ABG, R1Q6A7236ABG. Please refer to the document for exact specifications by model.

R1Q6A7218ABG Product details

Description

The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Features

႑ Power Supply.
1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) ႑ Clock.
Fast clock cycle time for high bandwidth.
Two input clocks (K and /K) for precise DDR timing at clock rising edges only.
Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches.
Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems.
Clock-stop capability with μs restart ႑ I/O.
Separate independent.

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Published: Jan 19, 2020 |