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R1Q6A7218ABG, R1Q6A7236ABG Datasheet - Renesas

R1Q6A7218ABG 72-Mbit DDRII SRAM Separate I/O 2-word Burst RAM

The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All inpu.

R1Q6A7218ABG Features

* ႑ Power Supply

* 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) ႑ Clock

* Fast clock cycle time for high bandwidth

* Two input clocks (K and /K) for precise DDR timing at clock rising edges only

* Two input clocks for output data (C and /C) to minimize clock skew a

R1Q6A7236ABG-Renesas.pdf