R1QLA4418RBG, R1QLA4436RBG - 144-Mbit DDRII+ SRAM 2-word Burst Architecture

Renesas

R1QLA4418RBG Datasheet Preview — This datasheet PDF includes multiple part numbers: R1QLA4418RBG, R1QLA4436RBG. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	R1QLA4418RBG, R1QLA4436RBG
Manufacturer	Renesas ↗
File Size	947.74 KB
Description	144-Mbit DDRII+ SRAM 2-word Burst Architecture
Datasheet	R1QLA4436RBG-Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: R1QLA4418RBG, R1QLA4436RBG. Please refer to the document for exact specifications by model.

R1QLA4418RBG Product details

Description

The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Features

Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ).
Clock z z z z Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems Clock-stop capability with μs restart.
I/O z z z z z z Common data input/output bus Pipelined double data rate operation HSTL I/O User programmable output impedance PLL circuitry for wide o.

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Published: Aug 13, 2020 |