R1QLA4418RBG Datasheet - Renesas

R1QLA4418RBG 144-Mbit DDRII+ SRAM 2-word Burst Architecture

The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. A.

R1QLA4418RBG Features

* Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)

* Clock z z z z Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems

R1QLA4418RBG Datasheet (947.74 KB)