R1RP0404DGE-2PR, R1RP0404D Datasheet - Renesas

R1RP0404DGE-2PR 4M High Speed SRAM

The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density me.

R1RP0404DGE-2PR Features

* Single 5.0 V supply: 5.0 V ± 10%

* Access time 12 ns (max)

* Completely static memory  No clock or timing strobe required

* Equal access and cycle times

* Directly TTL compatible  All inputs and outputs

* Operating current: 130 mA (max)

* T

R1RP0404D-Renesas.pdf