R1RP0416DI Datasheet (Renesas) - 4M High Speed SRAM

R1RP0416DI, 4M High Speed SRAM

The R1RP0416DI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

It is most appropriate for the application which requires high speed, high d

R1RP0416DI Features

* Single 5.0V supply: 5.0V ± 10%

* Access time: 10ns /12ns (max)

* Completely static memory ⎯ No clock or timing strobe required

* Equal access and cycle times

* Directly TTL compatible ⎯ All inputs and outputs

* Operating current: 170mA / 160mA (max)