R1RW0416DGE-2LR

4M High Speed SRAM

Renesas

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Renesas Electronics Corporation	R1RW0416DGE-2LR-B1	IC SRAM 4MBIT PARALLEL 44SOJ	DigiKey	104	54 units	$5.15	🛒 Buy Now

R1RW0416DGE-2LR Datasheet (567.58 KB)

R1RW0416DGE-2LR Datasheet Preview — Preview of R1RW0416DGE-2LR PDF

Datasheet Details

Part number:

R1RW0416DGE-2LR

Manufacturer:

Renesas ↗

File Size:

567.58 KB

Description:

4m high speed sram.

R1RW0416DGE-2LR Features

* Single 3.3V supply: 3.3V ± 0.3V

* Access time: 10ns / 12ns (max)

* Completely static memory ⎯ No clock or timing strobe required

* Equal access and cycle times

* Directly TTL compatible ⎯ All inputs and outputs

* Operating current: 145mA / 130mA (max

R1RW0416DGE-2LR General Description

The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density me.

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R1RW0416DGE-2LR High Speed SRAM Renesas

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