RAJ20660AGNP - Integrated Driver - MOS FET

Renesas

Datasheet Details

The RAJ20660AGNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package.

Compliant with Intel 6 × 6 DrMOS Specification.
Built-in power MOS FET suitable for Ultrabook, Notebook, Desktop, Server application.
Low-side MOS FET with built-in SBD for lower loss and reduced ringing.
Built-in driver circuit which matches the power MOS FET.
Built-in tri-state input function which can support a number of PWM controllers.
High-frequency operation (above 1 MHz) possible.
VIN operating-voltage range: 27 Vmax.

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Published: Oct 23, 2025 |