RJF0604DPD Silicon N-Channel FET

Renesas

Description

Target Specifications Datasheet RJF0604DPD Silicon N Channel MOS FET Series Power Switching R07DS0713EJ0100 Rev.1.00 Apr 17, 2012 .
This FET has the over temperature shut-down capability sensing to the junction temperature.

📥 Download Datasheet

RJF0604DPD Datasheet Preview — Preview of RJF0604DPD PDF

Datasheet Specifications

Part number: RJF0604DPD
Manufacturer: Renesas ↗
File Size: 82.63 KB
Datasheet: RJF0604DPD-Renesas.pdf
Description: Silicon N-Channel FET

Features

* Logic level operation (4 V Gate drive).
* Built-in the over temperature shut-down circuit.
* High endurance capability against to the short circuit.
* Latch type shut down operation (need 0 voltage recovery).
* Built-in the current limitation circuit.
* Power supply voltage

Applications

* Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 1 2 3 G Gate Resistor Temperature Sensing Circuit Latch Circuit Current Limitation Circuit Gate Shut-down Circuit D 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings Item Symbol Drain to source voltage

RJF0604DPD Distributors

📁 Related Datasheet

📌 All Tags

RJF0604DPD Silicon N-Channel FET Renesas

Renesas RJF0604DPD-like datasheet