RJF0604DPD

Silicon N-Channel FET

Renesas

RJF0604DPD Features

* Logic level operation (4 V Gate drive).

* Built-in the over temperature shut-down circuit.

* High endurance capability against to the short circuit.

* Latch type shut down operation (need 0 voltage recovery).

* Built-in the current limitation circuit.

* Power supply voltage

RJF0604DPD General Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio.

RJF0604DPD Datasheet (82.63 KB)