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RJF0611DPE N-Channel MOSFET

RJF0611DPE Description

Target Specifications Datasheet RJF0611DPE Silicon N Channel MOS FET Series Power Switching R07DS0717EJ0100 Rev.1.00 Apr 17, 2012 .
This FET has the over temperature shut-down capability sensing to the junction temperature.

RJF0611DPE Features

* Logic level operation (4 V Gate drive).
* Built-in the over temperature shut-down circuit.
* High endurance capability against to the short circuit.
* Latch type shut down operation (need 0 voltage recovery).
* Built-in the current limitation circuit.
* Power supply voltage

RJF0611DPE Applications

* Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 123 G Gate Resistor Temperature Sensing Circuit Latch Circuit Current Limitation Circuit Gate Shut-down Circuit D 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings Item Symbol Drain to source volt

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