RJK4018DPK
100.57kb
High speed power switching. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor
TAGS
📁 Related Datasheet
RJK4012DPE - Silicon N-Channel MOSFET
(Renesas Technology)
..
RJK4012DPE
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1575-0100 Rev.1.00 Aug 08, 2007
Features
• Low on-resistan.
RJK4013DPE - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
..
RJK4013DPE
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1513-0100 Rev.1.00 Feb 02, 2007
Features
• Low on-resistan.
RJK4014DPK - Silicon N-Channel MOSFET
(Renesas Technology)
..
RJK4014DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1576-0100 Rev.1.00 Aug 08, 2007
Features
• Low on-resistan.
RJK4015DPK - High Speed Power Switching MOS FET
(Renesas Technology)
RJK4015DPK
400V - 30A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.14 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)
.
RJK4002DJE - High Speed Power Switching
(Renesas)
Preliminary Datasheet
RJK4002DJE
400V - 3A - MOS FET High Speed Power Switching
Features
Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 .
RJK4002DPD - MOSFET
(Renesas)
RJK4002DPD
400V - 3A - MOS FET High Speed Power Switching
Features
• Low on-state resistance RDS(on) = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°.
RJK4002DPH-E0 - High Speed Power Switching
(Renesas)
Preliminary Datasheet
RJK4002DPH-E0
400V - 3A - MOS FET High Speed Power Switching
Features
Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.
RJK4002DPP-M0 - High Speed Power Switching
(Renesas)
Preliminary Datasheet
RJK4002DPP-M0
400V - 3A - MOS FET High Speed Power Switching
Features
Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.
RJK4006DPD - Silicon N Channel MOS FET
(Renesas)
RJK4006DPD
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
REN.
RJK4006DPP-M0 - High Speed Power Switching
(Renesas)
Preliminary Datasheet
RJK4006DPP-M0
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A.