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RJK4513DPE N-Channel Power MOSFET

RJK4513DPE Description

RJK4513DPE Silicon N Channel MOS FET High Speed Power Switching .

RJK4513DPE Features

* Low on-resistance RDS(on) = 0.33 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C)
* Low leakage current
* High speed switching REJ03G1586-0100 Rev.1.00 Dec 08, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain

RJK4513DPE Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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N-Channel Power MOSFET Renesas
Renesas RJK4513DPE-like datasheet